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| AM1517-025 RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS * REFRACTORY/GOLD METALLIZATION * EMITTER SITE BALLASTED * :1 VSWR CAPABILITY * LOW THERMAL RESISTANCE * INPUT/OUTPUT MATCHING * OVERLAY GEOMETRY * METALLIC/CERAMIC HERMETIC PACKAGE * POUT = 25 W MIN. WITH 8.5 dB GAIN ORDER CODE AM1517-025 SO42 hermetically sealed BRANDING 1517-25 PIN CONNECTION DESCRIPTION The AM1517-025 power transistor is designed specifically for Satellite communications applications in the 1.5 - 1.7 frequency range. The device is capable of withstanding any mismatch load condition at any phase angle (VSWR :1) under full rated conditions. The unit is an overlay, emitter site ballasted, geometry utilizing a refractory/Gold metallization system. TM The AM1517-025 is supplied in the AMPAC Hermetic/Ceramic package with internal Input/ Output matching structures. 1 4 3 2 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS(TCASE = 25 0C) Symbol PDISS IC V CC Tj TSTG Parameter Power Dissipation* ( Tc 50 0C) Device Current* Collector-Supply Voltage* Junction Temperature Storage Temperature Value 45 2.5 30 200 -65 to +200 Unit W A V 0C 0C THERMAL DATA R th(j-c) May 2000 Junction-Case Thermal Resistance* 3.3 0C/W * Applies only to rated RF amplifier operation 1/8 AM1517-025 ELECTRICAL SPECIFICATION(TCASE = 25 0C) STATIC Symbol BVCBO BVEBO ICBO hFE IC = 8 mA IE = 8 mA VCB = 28 V VCE = 5 V IC = 1.6 A Parameter IE = 0 mA IC = 0 mA Min. 45 3.0 --15 Typ. --------Max. ----2 150 Unit V V mA --- REF. 1015989D DYNAMIC Symbol POUT f = 1.5 - 1.7 GHz f = 1.5 - 1.7 GHz f = 1.5 - 1.7 GHz Parameter PIN = 3.5 W PIN = 3.5 W PIN = 3.5 W VCC = 28 V VCC = 28 V VCC = 28 V Min. 25 50 8.5 Typ. -----Max. ------Unit W % dB D GP Note: AM1517 series vary PIN to achieve POUT; performance guaranteed in 50 MHz increments. Alpha-Suffix added to AM1517 P/N desigates band segment. M - 1620 - 1660 MHz S - 1625 - 1675 MHz 2/8 AM1517-025 TYPICAL PERFORMANCE Output Power & Collector Efficiency vs Input Power Output Power vs Case Temperature Collector Efficiency vs Case Temperature Output Power & Collector Efficiency vs Collector Voltage Gain vs Case Temperature 3/8 AM1517-025 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN POUT = 25 W VCC = 28 V ZO = 50 OHMS Frequency MHz 1.5 GHz 1.6 GHz 1.7 GHz ZIN ZCL () 8.5 + j 13.0 8.0 + j 12.5 9.0 + j 12.0 () 12.0 - j 4.0 7.5 - j 4.5 9.0 - j 6.0 TYPICAL COLLECTOR LOAD IMPEDANCE ZCL POUT = 25 W VCC = 28 V ZO = 50 OHMS 4/8 AM1517-025 TEST CIRCUIT SCHEMATIC REV. 1022332D TEST CIRCUIT COMPONENT PART LIST C1,C2 C3 C4 C5 L1 L2 BOARD 0.4-2.5pF GIGA TRIM VARIABILE CAPACITOR 100pF SURFACE MOUNT CERAMIC CHIP CAPACITOR 1000pF RESIN SEALED # 8-35 THREADED FEEDTHRU CAPACITOR 0.1F/50v CERAMIC MOLDED RADIAL LEAD CAPACITOR 3 TURN AIR WOUND COIL #26AWG, ID. 0.070 [1.77] BUS BAR WIRE 3 TURN AIR WOUND COIL #26AWG, ID. 0.070 [1.77] BUS BAR WIRE ALUMINA CERAMIC SUBSTRATE, HIGH POLISHED 1.0" SQ [25.40], 0.025" [0.63] THK. 200 MICROINCHES Au, BOTH SIDES r=9.6, 5/8 AM1517-025 TEST CIRCUIT TEST CIRCUIT PHOTOMASTER 1 inch 0.773 inches 6/8 0.824 inches AM1517-025 SO42 (.400 X .400 2/L HERM W/FLG) MECHANICAL DATA DIM. A B C D E F G H I J K L M N P Q 22.35 16.26 22.61 10.03 0.10 1.32 2.84 9.55 2.79 10.03 4.90 11.43 3.18 16.76 23.11 10.54 0.18 1.83 3.35 5.84 23.37 .880 .640 .890 .395 .004 .052 .112 mm MIN. 0.51 6.35 10.06 3.30 10.34 .376 .110 .395 .193 .450 .125 .660 .910 .415 .006 .072 .132 .230 .920 TYP. MAX 0.76 MIN. .020 .250 .396 .130 .407 Inch TYP. MAX .030 1011416B 7/8 AM1517-025 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. N o license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics, 2000 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 8/8 |
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